Precise contour following for biaxial systems via an A-type iterative learning cross-coupled control algorithm

This paper proposes an A-type iterative learning cross-coupled control (CCC) algorithm for biaxial systems. An algebraic equation based contour error model is used as the CCC input. This model has the advantage that it is zero if and only if the real value vanishes. The iterative learning CCC is designed to make its input converge to zero. Hence, it is expected to that the contour error will converge to zero as well. After analyzing the control algorithm convergence condition in the frequency domain, the proposed method is implemented on a motion stage. Experimental results show that the algorithm perfectly follows contours as the cycles approach infinity regardless of whether tracking errors are small or large.     

一种广义不可分支持向量机算法

针对标准的C-SVM(C-support vector machine)算法在处理很多实际分类问题时，对识别错误代价损失差异很大的极端情况表现出的局限性，提出一种通用的 广义支持向量机算法。根据识别错误后所付出的代价，可以把最优分类面向代价损失低的一方进行推移，留给代价损失高的一方更大的空间，提高其识别率，从而减小识别错误后带来的代价损失。该方法进一步提高了标准C SVM的适用性以及样本的正确识别率，将新算法应用到高分辨雷达距离像的识别中，实验证明,广义C-SVM能取得比传统C-SVM更好的识别效果。     

Solving a new multi-objective multi-route flexible flow line problem by multi-objective particle swarm optimization and NSGA-II

Mass production, meeting the increasing demands of the customers is a necessity. Such a production is mainly dependent on a factory manufacturing called flow line production. This paper deals with special type of production by the name of flexible manufacturing system, assuming the presence of multi processors in each station of a multi-station arrangement. The model debated in the paper possesses three objective functions, the first of which attempts to minimize the weighted delays. The second objective function tries to minimize the capital for the purchase of the processors at stations and the third objective function minimizes the capital dedicated to select the optimum processing route of parts. For the validation of the mathematical model, use has been made of NSAGAII and MOPSO approaches.     

汽车总装线上远程激光焊接能量评估

通过分析激光源的类型和结构,建立参数数据库,并结合机器人运动的动力学分析,本研究提出了汽车总装线上远程激光焊接(RLW)的能量评估模型。通过对简单焊件进行焊接实验,将传统激光焊接和远程激光焊接进行了对比,结果发现,焊接过程中机器人运动能量逐渐减少,而激光能量逐渐增加。处理时间和激光功率是影响远程焊接能源效率的主要因素。     

ECISER: Efficient Clip-art Image SEgmentation by Re-rasterization

Clip-art image segmentation is widely used as an essential step to solve many vision problems such as colorization and vectorization. Many of these applications not only demand accurate segmentation results, but also have little tolerance for time cost, which leads to the main challenge of this kind of segmentation. However, most existing segmentation techniques are found not sufficient for this purpose due to either their high computation cost or low accuracy. To address such issues, we propose a novel segmentation approach, ECISER, which is well-suited in this context. The basic idea of ECISER is to take advantage of the particular nature of cartoon images and connect image segmentation with aliased rasterization. Based on such relationship, a clip-art image can be quickly segmented into regions by re-rasterization of the original image and several other computationally efficient techniques developed in this paper. Experimental results show that our method achieves dramatic computational speedups over the current state-of-the-art approaches, while preserving almost the same quality of results.     

巨型水电站孤岛试验期间AVC电压波动的解决

本文首先分析国内典型的AVC的一般配置、控制策略和控制原理,针对巨型水电站孤岛试验期间的AVC控制的复杂工况进行阐述,对出现的AVC电压波动的情况进行分析,并对采用的解决方案进行介绍,为今后类似电站的孤岛运行期间的AVC电压控制提供一些参考建议。     

Channel length influenced contribution of hole and electron trapping effect to threshold voltage stability in organic field effect transistors

Effect of channel length on hysteresis and threshold voltage shift in copper phthalocyanine (CuPc) based organic field effect transistors was studied. Contrary to expectation, longer channel length devices exhibited minimum threshold voltage shift. Influence of channel length on the contribution of hole and electron trapping to threshold voltage stability was determined. Shortest channel length devices exhibited highest electron trapping effect while longest channel devices exhibited minimum hole as well as electron trapping. Lower hole trap effect for longer channel length devices was suggested to be due to reduced longitudinal field between source and drain electrodes while minimum electron trapping was attributed to suppression of drain current by increased hole trap centres.     

Voltage Assisted Control of Spin-Transfer Nano-Oscillators

The spin-transfer nano-oscillator(STNO) has recently acquired a huge amount of research interest, due to its promising easy tunability along with the miniature size. The output frequency control of an STNO through magnetic field and current has been examined almost to its full extent; however, there are issues that still need to be addressed. Here, we propose a novel way of voltage control of the output frequency of an STNO, and alongside reducing its power requirement.     

Unreliable numbers: error and harm induced by bad design can be reduced by better design

Number entry is a ubiquitous activity and is often performed in safety- and mission-critical procedures, such as healthcare, science, finance, aviation and in many other areas. We show that Monte Carlo methods can quickly and easily compare the reliability of different number entry systems. A surprising finding is that many common, widely used systems are defective, and induce unnecessary human error. We show that Monte Carlo methods enable designers to explore the implications of normal and unexpected operator behaviour, and to design systems to be more resilient to use error. We demonstrate novel designs with improved resilience, implying that the common problems identified and the errors they induce are avoidable.     

High-voltage and low specific on-resistance power UMOSFET using P and N type columns

For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (R_on,sp) of 2 mΩ cm², which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively.